Estimation of nitrogen ion energy calculated using distribution for nitrogen in Si implanted by PBII
✍ Scribed by T. Tanaka; S. Watanabe; T. Takagi
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 152 KB
- Volume
- 242
- Category
- Article
- ISSN
- 0168-583X
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✦ Synopsis
Plasma-based ion implantation (PBII) using N 2 gas is examined as a sterilization technique for three-dimensional targets. The application of a pulsed negative voltage (5 ls pulse width, 300 pulses/s, À800 V to À13 kV) at an N 2 gas pressure of 2.4 Pa is shown to reduce the number of Bacillus pumilus survivors by up to 10 5 times after just 5 min of exposure. The energy of nitrogen ions is calculated based on the depth profile of nitrogen concentration in Si implanted by PBII, and it is revealed that the actual nitrogen ion energy is much lower than that calculated based on the voltage applied during processing.