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The effects of process pressure and microwave power on the properties of boron-doped SiC: H films prepared using the ECR-CVD technique

โœ Scribed by Yoon, S.F.; Ji, R.; Ahn, J.; Milne, W.I.

Book ID
122424752
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
552 KB
Volume
5
Category
Article
ISSN
0925-9635

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Doping and microwave power effects in the preparation of n-type SiC:H films using ECR-CVD
โœ S.F. Yoon; R Ji; J Ahn ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 895 KB

## This paper reports the deposition of hydrogenated silicon carbide ISiC:HI films using the electron cyclotron resonance chemical vapour deposition (EC!?-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas.