This paper reports the deposition of hydrogenated silicon carbide ISiC:HI films using the electron cyclotron resonance chemical vapour deposition (EC!?-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas. The effects of changing the phosphine fraction on the optical bandgap, activation energy and conductivity were investigated in films deposited at two different mjcrowave powers of 750 Wand 600 W, respectjvety. The effects of changes in the microwave power (from 150 W to 900 WI on the eharacterjsti~s of the phosphorus-doped corns were also investigated. An increase in the microwave power and high phosphorus doping fractions enhanced the formation of the silicon microcrystalline phase in the films. Films having a strong silicon microcrystalline phase exhibited relatively small changes in the optical bandgap. The film conductivity increased rapidly followed by saturation as the microwave power or phosphorus doping fraction was increased.
Correspondingly, the actjvation energy decreased and saturated suggesting an effect from dopant saturation. The resufts showed that good phosphorus doping e~icjency can be obtained in SiC:H corns deposited at high microwave power.