๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Influence of boron doping on the properties of amorphous and microcrystalline SiC films prepared using ECR-CVD

โœ Scribed by S. F. Yoon; R. Ji; J. Ahn

Book ID
112815839
Publisher
Springer US
Year
1996
Tongue
English
Weight
599 KB
Volume
25
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Doping and microwave power effects in th
Doping and microwave power effects in the preparation of n-type SiC:H films using ECR-CVD
โœ S.F. Yoon; R Ji; J Ahn ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 895 KB

## This paper reports the deposition of hydrogenated silicon carbide ISiC:HI films using the electron cyclotron resonance chemical vapour deposition (EC!?-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas.