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Influence of boron doping on the properties of amorphous and microcrystalline SiC films prepared using ECR-CVD

โœ Scribed by S. F. Yoon; R. Ji; J. Ahn


Book ID
112815839
Publisher
Springer US
Year
1996
Tongue
English
Weight
599 KB
Volume
25
Category
Article
ISSN
0361-5235

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## This paper reports the deposition of hydrogenated silicon carbide ISiC:HI films using the electron cyclotron resonance chemical vapour deposition (EC!?-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas.