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Some effects of boron doping in a-SiC:H films prepared by the ECR-CVD method

โœ Scribed by S.F. Yoon; R. Ji; J. Ahn


Book ID
117148120
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
471 KB
Volume
211
Category
Article
ISSN
0022-3093

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โœ S.F. Yoon ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 591 KB

## Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance plasma chemical vapour deposition (ECR-CVD) method from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The tubular vessel used had a substrate receiver circular area of

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## This paper reports the deposition of hydrogenated silicon carbide ISiC:HI films using the electron cyclotron resonance chemical vapour deposition (EC!?-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas.