## Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance plasma chemical vapour deposition (ECR-CVD) method from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The tubular vessel used had a substrate receiver circular area of
โฆ LIBER โฆ
Some effects of boron doping in a-SiC:H films prepared by the ECR-CVD method
โ Scribed by S.F. Yoon; R. Ji; J. Ahn
- Book ID
- 117148120
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 471 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0022-3093
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## This paper reports the deposition of hydrogenated silicon carbide ISiC:HI films using the electron cyclotron resonance chemical vapour deposition (EC!?-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas.
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