✦ LIBER ✦

Preparation of n-type SiC:H using ECR—CVD: some effects of microcrystallite silicon formation induced by phosphorus doping and microwave power

✍ Scribed by S.F. Yoon; R. Ji; J. Ahn

Book ID: 114194237
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 779 KB
Volume: 49
Category: Article
ISSN: 0254-0584
DOI: 10.1016/s0254-0584(97)80170-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Doping and microwave power effects in th

Doping and microwave power effects in the preparation of n-type SiC:H films using ECR-CVD

✍ S.F. Yoon; R Ji; J Ahn 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 895 KB

## This paper reports the deposition of hydrogenated silicon carbide ISiC:HI films using the electron cyclotron resonance chemical vapour deposition (EC!?-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas.