๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Microwave power effects on the properties of phosphorus-doped SiC:H films prepared using ECR-CVD

โœ Scribed by Yoon, S.F.; Ji, R.; Ahn, J.; Milne, W.I.

Book ID
123417309
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
974 KB
Volume
6
Category
Article
ISSN
0925-9635

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Doping and microwave power effects in th
Doping and microwave power effects in the preparation of n-type SiC:H films using ECR-CVD
โœ S.F. Yoon; R Ji; J Ahn ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 895 KB

## This paper reports the deposition of hydrogenated silicon carbide ISiC:HI films using the electron cyclotron resonance chemical vapour deposition (EC!?-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas.

Boron doping effects and microcrystallit
Boron doping effects and microcrystallite formation in SiC:H films prepared using ECR-CVD
โœ S.F. Yoon ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 591 KB

## Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance plasma chemical vapour deposition (ECR-CVD) method from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The tubular vessel used had a substrate receiver circular area of