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The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition

✍ Scribed by Oh, Il-kwon; Kim, Min-Kyu; Lee, Jae-seung; Lee, Chang-Wan; Lansalot-Matras, Clement; Noh, Wontae; Park, Jusang; Noori, Atif; Thompson, David; Chu, Schubert; Maeng, W.J.; Kim, Hyungjun

Book ID: 122954047
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 798 KB
Volume: 287
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2013.09.153

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