๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Structural properties of Al2O3 dielectrics grown on TiN metal substrates by atomic layer deposition

โœ Scribed by Chun-I. Hsieh; Tung-Ming Pan; Jian-Chyi Lin; Yan-Bo Peng; Tsai-Yu Huang; Chang-Rong Wu; Steven Shih


Book ID
108063791
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
925 KB
Volume
255
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Properties of Al2O3-films deposited on s
โœ Per Ericsson; Stefan Bengtsson; Jarmo Skarp ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 293 KB

A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900ยฐC resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i