Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

✍ Scribed by Per Ericsson; Stefan Bengtsson; Jarmo Skarp

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 293 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00022-1

✦ Synopsis

A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly influence the breakdown fields which were in the range of 7-8 MV/cm, but reduced the leakage currents through the films by several orders of magnitude. Mobile charges and charge trapping were observed using the capacitance-voltage technique. The charging properties improved dramatically after the post-deposition anneal.