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Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

✍ Scribed by H. Kattelus; M. Ylilammi; J. Saarilahti; J. Antson; S. Lindfors


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
223 KB
Volume
225
Category
Article
ISSN
0040-6090

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Atomic Layer Deposition of Gadolinium Ox
✍ K. Kukli; T. HatanpÀÀ; M. Ritala; M. LeskelΓ€ πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 320 KB πŸ‘ 1 views

Thin cubic Gd 2 O 3 films are grown by atomic layer deposition (ALD), in the temperature range 300-400 Β°C, using a novel tris(2,3-dimethyl-2-butoxy)gadolinium(III) precursor, Gd[OC(CH 3 ) 2 CH(CH 3 ) 2 ] 3 , and water. The films are crystalline in their as-deposited state. The films contain some res