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Deposition and etching of tantalum oxide films in atomic layer epitaxy process

✍ Scribed by Jaan Aarik; Aleks Aidla; Kaupo Kukli; Teet Uustare

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
240 KB
Volume
144
Category
Article
ISSN
0022-0248

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Thin cubic Gd 2 O 3 films are grown by atomic layer deposition (ALD), in the temperature range 300-400 °C, using a novel tris(2,3-dimethyl-2-butoxy)gadolinium(III) precursor, Gd[OC(CH 3 ) 2 CH(CH 3 ) 2 ] 3 , and water. The films are crystalline in their as-deposited state. The films contain some res