Atomic Layer Deposition of Gadolinium Oxide Films

✍ Scribed by K. Kukli; T. Hatanpää; M. Ritala; M. Leskelä

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 320 KB
• Volume: 13
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200706631

✦ Synopsis

Thin cubic Gd 2 O 3 films are grown by atomic layer deposition (ALD), in the temperature range 300-400 °C, using a novel tris(2,3-dimethyl-2-butoxy)gadolinium(III) precursor, Gd[OC(CH 3 ) 2 CH(CH 3 ) 2 ] 3 , and water. The films are crystalline in their as-deposited state. The films contain some residual hydrogen and carbon, and are probably oxygen-deficient in the as-deposited state, causing flat-band shifts in Gd 2 O 3 -based metal-oxide-semiconductor (MOS) capacitor structures. On the other hand, the permittivity of Gd 2 O 3 dielectric layers reaches 16, approximately, when calculated from the relationship between equivalent and physical oxide thicknesses, and breakdown fields as high as 8 MV cm -1 .