𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Hafnium silicon oxide films prepared by atomic layer deposition

✍ Scribed by Kaupo Kukli; Mikko Ritala; Markku Leskelä; Timo Sajavaara; Juhani Keinonen; David C Gilmer; Philip J Tobin

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
107 KB
Volume
109
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Atomic Layer Deposition of Hafnium Dioxi
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water
✍ K. Kukli; M. Ritala; M. Leskelä; T. Sajavaara; J. Keinonen; A.C. Jones; N.L. Tob 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 272 KB 👁 1 views

## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow

Atomic Layer Deposition of Gadolinium Ox
Atomic Layer Deposition of Gadolinium Oxide Films
✍ K. Kukli; T. Hatanpää; M. Ritala; M. Leskelä 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 320 KB 👁 1 views

Thin cubic Gd 2 O 3 films are grown by atomic layer deposition (ALD), in the temperature range 300-400 °C, using a novel tris(2,3-dimethyl-2-butoxy)gadolinium(III) precursor, Gd[OC(CH 3 ) 2 CH(CH 3 ) 2 ] 3 , and water. The films are crystalline in their as-deposited state. The films contain some res