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Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water.

✍ Scribed by Kaupo Kukli; Mikko Ritala; Markku Leskelae; Timo Sajavaara; Juhani Keinonen; Anthony C. Jones; Neil L. Tobin

Publisher
John Wiley and Sons
Year
2004
Weight
56 KB
Volume
35
Category
Article
ISSN
0931-7597

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Atomic Layer Deposition of Hafnium Dioxi
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water
✍ K. Kukli; M. Ritala; M. LeskelΓ€; T. Sajavaara; J. Keinonen; A.C. Jones; N.L. Tob πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 272 KB πŸ‘ 1 views

## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow