✦ LIBER ✦

Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition

✍ Scribed by Yan Xu; Lin Chen; Qing-Qing Sun; Jing-Jing Gu; Hong-Liang Lu; Peng-Fei Wang; Shi-Jin Ding; David Wei Zhang

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 607 KB
Volume: 150
Category: Article
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2010.06.023

No coin nor oath required. For personal study only.

✦ Synopsis

A. Nb 2 O 5 and Al 2 O 3 B. Atomic layer deposition C. Optical properties D. Electronic structure a b s t r a c t Nb 2 O 5 and Nb doped Al 2 O 3 have proved to be good candidates as resistive switch materials or optical materials.

In this letter, we focus on the complex electronic structure and optical properties of Nb doped Al 2 O 3 to give chemical physical images of the films. With the help of SE, XPS and XPS valence band spectra, the detailed electronic structure with atomic bonding structure and optical properties are given. The band gap of a thin oxide film is determined to be 5.05 eV, and the evolution of VBO and CBO of the film on Si are also discussed.

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