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Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

✍ Scribed by Nam Kyun Park; Dong Kyun Kang; Byong-Ho Kim; Sang Jin Jo; Jeong Sook Ha

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
222 KB
Volume
252
Category
Article
ISSN
0169-4332

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✍ Youngcheon Jeong; Masao Sakuraba; Junichi Murota πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t