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Structural and optical properties of N-doped β-Ga2O3 films deposited by RF magnetron sputtering

✍ Scribed by Yijun Zhang; Jinliang Yan; Qingshan Li; Chong Qu; Liying Zhang; Ting Li

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
930 KB
Volume
406
Category
Article
ISSN
0921-4526

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✦ Synopsis

The N-doped b-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped b-Ga 2 O 3 films are significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands are observed and discussed.

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