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Effects of annealing temperature and Al2O3 buffer layer on ZnO thin films grown by atomic layer deposition

✍ Scribed by C.R. Kim; J.Y. Lee; J.H. Heo; C.M. Shin; T.M. Lee; J.H. Park; H. Ryu; J.H. Chang; C.S. Son

Book ID
108079255
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
370 KB
Volume
10
Category
Article
ISSN
1567-1739

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## Abstract In this study, the effects of postannealing on ZnO and Al~2~O~3~ films grown for a thin‐film transistor (TFT) by the atomic layer deposition (ALD) method were examined using transmission electron microscopy (TEM) and energy‐dispersion spectroscopy. Samples were subjected to rapid therma