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Studies on the morphology of Al2O3 thin films grown by atomic layer epitaxy

✍ Scribed by Mikko Ritala; Heini Saloniemi; Markku Leskelä; Thomas Prohaska; Gernot Friedbacher; Manfred Grasserbauer


Book ID
108388888
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
889 KB
Volume
286
Category
Article
ISSN
0040-6090

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Properties of Al2O3-films deposited on s
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A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i