Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

✍ Scribed by Jung, Hyung-Suk; Yu, Il-Hyuk; Kim, Hyo Kyeom; Lee, Sang Young; Lee, Joohwi; Choi, Yujin; Chung, Yoon Jang; Lee, Nae-In; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong

• Book ID: 118232056
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 729 KB
• Volume: 59
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2012.2204996