✦ LIBER ✦

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

✍ Scribed by Li, Xue-Fei; Liu, Xiao-Jie; Cao, Yan-Qiang; Li, Ai-Dong; Li, Hui; Wu, Di

Book ID: 119192700
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 637 KB
Volume: 264
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2012.10.127

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Improvement of interfacial properties wi

Improvement of interfacial properties with interfacial layer in La2O3/Ge structure

✍ J. Song; K. Kakushima; P. Ahmet; K. Tsutsui; N. Sugii; T. Hattori; H. Iwai 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 471 KB

Reduction of Charge Trapping in $\hbox{H

Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

✍ Jung, Hyung-Suk; Yu, Il-Hyuk; Kim, Hyo Kyeom; Lee, Sang Young; Lee, Joohwi; Choi 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 729 KB

Electrical properties of La2O3 thin film

Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

✍ Nam Kyun Park; Dong Kyun Kang; Byong-Ho Kim; Sang Jin Jo; Jeong Sook Ha 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 222 KB

Interfacial and Electrical Characterizat

Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3

✍ Xinhong Cheng; Dawei He; Zhaorui Song; Yuehui Yu; Dashen Shen 📂 Article 📅 2009 🏛 Elsevier ⚖ 336 KB

HfO 2 gate dielectric films with a blocking layer of Al 2 O 3 inserted between HfO 2 layer and Si layer (HfO 2 /Si) were treated with rapid thermal annealing process at 700 . The interfacial structure and electrical properties were reported. The results of X-ray photoelectron spectroscopy showed tha

Band alignment and interfacial propertie

Band alignment and interfacial properties of atomic layer deposited (TiO2)x(Al2O3)1−xgate dielectrics on Ge

✍ Xue-Fei Li; Ying-Ying Fu; Xiao-Jie Liu; Ai-Dong Li; Hui Li; Di Wu 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 900 KB

The effect of blocking layer of Al2O3 on

The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer

✍ Xinhong Cheng; Dawei He; Zhaorui Song; Yuehui Yu; DaShen Shen 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 409 KB