𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer

✍ Scribed by Xinhong Cheng; Dawei He; Zhaorui Song; Yuehui Yu; DaShen Shen

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
409 KB
Volume
85
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Interface composition of atomic layer de
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
✍ R. Timm; M. Hjort; A. Fian; C. Thelander; E. Lind; J.N. Andersen; L.-E. Wernerss πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 414 KB

We present a synchrotron-based XPS investigation on the interface between InAs and Al 2 O 3 or HfO 2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the hi

Atomic layer deposition of Cr2O3 thin fi
Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties
✍ Aivar Tarre; Jaan Aarik; Hugo MΓ€ndar; Ahti Niilisk; Rainer PΓ€rna; Raul Rammula; πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 616 KB

Atomic layer deposition of Cr 2 O 3 thin films from CrO 2 Cl 2 and CH 3 OH on amorphous SiO 2 and crystalline Si(1 0 0) and a-Al 2 O 3 (1 1 0 2) substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05-0.1 nm/cycle was obtained at substrate t