The Effect of a Si Capping Layer on RF Characteristics of High-$k$ /Metal Gate SiGe Channel pMOSFETs

✍ Scribed by Park, Min Sang; Lee, Kyong Taek; Kang, Chang Yong; Choi, Gil-Bok; Sagong, Hyun Chul; Sohn, Chang Woo; Min, Byoung-Gi; Oh, Jungwoo; Majhi, Prashant; Tseng, Hsing-Huang; Lee, Jack C.; Lee, Jeong-Soo; Jammy, Raj; Jeong, Yoon-Ha

• Book ID: 120068384
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 335 KB
• Volume: 31
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2010.2061212