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Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

โœ Scribed by Ook Sang Yoo; Jungwoo Oh; Kyung Seok Min; Chang Yong Kang; B.H. Lee; Kyong Taek Lee; Min Ki Na; Hyuk-Min Kwon; P. Majhi; H-H Tseng; Raj Jammy; J.S. Wang; Hi-Deok Lee

Book ID
104051966
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
320 KB
Volume
86
Category
Article
ISSN
0167-9317

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The influence of substrate heterostructure (Si/ SiGe/ Si) on performance of MOSFETs with high-k/metal gate stacks has been studied. In particular, the effects of the channel thickness on the performance and short channel properties are evaluated. It is found that these heterostructures, when designe