## Abstract The paper reports the results of a structural investigation of C.V.D. tantalum, which had been deposited on a silica substrate. Deposits at 1000Β°C were high impurity powders or flakes, at 1100Β°C (normal deposition temperature) foilβlike, these containing much lower silicon contents, bei
The Chemical Vapour Deposition of Tantalum
β Scribed by Drs. D. J. Jerreat; Rees D. Rawlings
- Publisher
- John Wiley and Sons
- Year
- 1974
- Tongue
- English
- Weight
- 485 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
The effect of the total pressure, feed temperature, deposition temperature, and reaction tube inclination and geometry on the chemical vapour deposition of tantalum from the pentaiodide has been investigated. Transport rates as high as 350 mg hr^β1^ were achieved in inclined tubes of specific geometry with a feed temperature of 650Β°C and a deposition temperature of 1200Β°C. The dependence of the transport rate on the total pressure, and the feed and deposition temperatures has been analysed and suggestions made as to the rate controlling processes.
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## Abstract AIN was deposited pyrolytically by means of the aluminium trichlorideβammonia process (either introducing both compounds seperately or in complex form) and by plasmachemical reaction of aluminium trichloride with nitrogen at temperatures from 600 to 1300Β°C. Layers deposited onto (100) s
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