We have applied the novel method of hot filament-activated chemical vapour deposition (HFCVD) for low-temperature deposition of a variety of nitride thin films. In this paper the results from our recent work on aluminium, silicon and titanium nitride have been reviewed. In the HFCVD method a hot tun
Chemical and plasmachemical vapour deposition of aluminium nitride layers
β Scribed by Prof. Dr. H. Arnold; Dipl.-Chem. L. Biste; Dipl.- Ing. D. Bolze; Dr. G. Eichhorn
- Publisher
- John Wiley and Sons
- Year
- 1976
- Tongue
- English
- Weight
- 281 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
β¦ Synopsis
Abstract
AIN was deposited pyrolytically by means of the aluminium trichlorideβammonia process (either introducing both compounds seperately or in complex form) and by plasmachemical reaction of aluminium trichloride with nitrogen at temperatures from 600 to 1300Β°C. Layers deposited onto (100) spinel had an epitaxial (0001) orientation, whereas fibre textures resulted on silicon and quartz glass.
π SIMILAR VOLUMES
A silicon nitride Γlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Γlms by bu β ered hydroΓuoric acid (BHF) were investigated using Ruth
## Abstract The effect of the total pressure, feed temperature, deposition temperature, and reaction tube inclination and geometry on the chemical vapour deposition of tantalum from the pentaiodide has been investigated. Transport rates as high as 350 mg hr^β1^ were achieved in inclined tubes of sp