Analysis of the transition layer in silicon nitride films deposited by a low-pressure chemical vapour deposition

✍ Scribed by Tanaka, Koki; Tsuge, Atsuko; Takiyama, Makoto; Shimizu, Ryuichi

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 246 KB
• Volume: 27
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199907)27:7<638::aid-sia552>3.0.co;2-#

✦ Synopsis

A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroÑuoric acid (BHF) were investigated using Rutherford backscattering spectroscopy. The change of the etching rate at the interface region suggested the existence of a transition layer on the interface between the silicon nitride Ðlm and the silicon dioxide layer on the substrate. The silicon concentration of the transition layer is higher than that of the silicon nitride. The existence of a transition layer was also conÐrmed by angular-resolved XPS. Measurement of the etching rate of the silicon nitride Ðlms by BHF was applied to clarify the relation between the deposition conditions of the silicon nitride Ðlms and the thickness of the transition layer. The growth of the transition layer was controlled by nitridation of the substrate in ammonia ambient before deposition of the silicon nitride Ðlm.