Deposition of cadmium sulphide thin films from the single-source precursor bis(diethylmonothiocarbamato)cadmium(II) by low-pressure metalorganic chemical vapour deposition

✍ Scribed by M. Chunggaze; M. Azad Malik; P. O'Brien

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 157 KB
• Volume: 7
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/(sici)1099-0712(199711/12)7:6<311::aid-amo321>3.0.co;2-w

✦ Synopsis

Thin films of CdS were grown by low-pressure metalorganic chemical vapour deposition (LP-MOCVD, 10 72 Torr) on GaAs(100) and borosilicate glass using the novel single-source precursor bis(diethylmonothiocarbamato)cadmium(II). The deposition of CdS was observed at substrate temperatures of 300 8C and above. Uniform adherent films of CdS were grown on GaAs(100) at temperatures between 350 and 450 8C. CdS films deposited on glass were generally transparent with small crystallites (,50 nm). Films were characterised by X-ray diffraction and scanning electron microscopy and shown to be of hexagonal phase. A band gap of 2.39 eV was measured for the thin films of CdS. *