ChemInform Abstract: Deposition of Thin Films of Gallium Sulfide from a Novel Single-Source Precursor, Ga(S2CNMeHex)3, by Low-Pressure Metal—Organic Chemical Vapor Deposition.
✍ Scribed by Mike R. Lazell; Paul O'Brien; David J. Otway; Jin-Ho Park
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 36 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0931-7597
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Deposition of Thin Films of Gallium Sulfide from a Novel Liquid Single-Source Precursor, Ga(SOCNEt 2 ) 3 , by Aerosol-Assisted CVD. -The novel liquid gallium monothiocarbamato complex (III) is utilized as a single-source precursor for the deposition of face-centered cubic GaS films on glass substra
The Synthesis and Thermal Evaluation of a Novel Cerium Precursor to Grow Thick Ceria Films by Metal-Organic Chemical Vapor Deposition ( MOCVD). -The novel liquid precursor ((Ce(fod)3)2tetraglyme) (fod-H: 1,1,1,2,2,3,tetraglyme: MeO(CH2CH2O) 4Me) is prepared and characterized by NMR, TGA, and powder