ChemInform Abstract: Deposition of Thin Films of Gallium Sulfide from a Novel Liquid Single-Source Precursor, Ga(SOCNEt2)3, by Aerosol-Assisted CVD.

✍ Scribed by Graeme A. Horley; Mike R. Lazell; Paul O'Brien

• Publisher: John Wiley and Sons
• Year: 2010
• Weight: 33 KB
• Volume: 30
• Category: Article
• ISSN: 0931-7597
• DOI: 10.1002/chin.199951235

✦ Synopsis

Deposition of Thin Films of Gallium Sulfide from a Novel Liquid Single-Source Precursor, Ga(SOCNEt 2 ) 3 , by Aerosol-Assisted CVD.

-The novel liquid gallium monothiocarbamato complex (III) is utilized as a single-source precursor for the deposition of face-centered cubic GaS films on glass substrates by aerosol-assisted chemical vapor deposition at a substrate temp. of 350 • C (N 2 stream, 1 h). The films show a high degree of orientation and an unusual spherical morphology arranged in a reasonably uniform array on the substrate. -(