Metalorganic chemical vapour deposition of oriented ZnO films
โ Scribed by Dr. Th. Kaufmann; E. Fuchs; M. Webert
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 309 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0232-1300
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๐ SIMILAR VOLUMES
InSe films are grown at 230-420 โข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โข C ball
Thin films of CdS were grown by low-pressure metalorganic chemical vapour deposition (LP-MOCVD, 10 72 Torr) on GaAs(100) and borosilicate glass using the novel single-source precursor bis(diethylmonothiocarbamato)cadmium(II). The deposition of CdS was observed at substrate temperatures of 300 8C and
## Abstract The effect of the total pressure, feed temperature, deposition temperature, and reaction tube inclination and geometry on the chemical vapour deposition of tantalum from the pentaiodide has been investigated. Transport rates as high as 350 mg hr^โ1^ were achieved in inclined tubes of sp