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Synthesis of epitaxial 3C-SiC by C60 carbonization of silicon on sapphire

✍ Scribed by K. Volz; J. Müller; W. Reiber; B. Rauschenbach; B. Stritzker

Book ID
104107375
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
330 KB
Volume
36
Category
Article
ISSN
0008-6223

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✦ Synopsis

C, molecule deposition onto commercial SOS (silicon on sapphire) wafers with (001) silicon on r-plane (1102) sapphire results in the formation of silicon carbide (Sic), if substrate temperatures of 810°C are exceeded. Elastic recoil spectroscopy indicates the formation of a stoichiometric Sic layer. X-ray pole figure measurements show that the main part of the resulting cubic 3C-Sic grows epitaxially with the underlaying silicon. Cross-sectional transmission electron microscopic investigations indicate as well that the 3C-Sic exhibits an epitaxial relationship to the Si matrix and that the resulting Sic grains grow columnarly.

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