Control of 3C-SiC/Si wafer bending by the “checker-board” carbonization method

✍ Scribed by Chassagne, T. ;Ferro, G. ;Haas, H. ;Mank, H. ;Leycuras, A. ;Monteil, Y. ;Soares, F. ;Balloud, C. ;Arcade, Ph. ;Blanc, C. ;Peyre, H. ;Juillaguet, S. ;Camassel, J.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 506 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200460415

✦ Synopsis

Abstract

Due to the large difference in lattice parameters and thermal expansion coefficients, the hetero‐epi‐ taxial growth of 3C–SiC on Si mainly results in highly defective layers on strongly bent wafers. The defects may not be detrimental for very basic applications, but the bow is. In order to solve this problem, we have developed a technique called “checker‐board” carbonization which, basically, balances a compressive (interfacial) stress by a tensile one. In this way, the overall bending is effectively reduced. In this work, we will report on the effect of polishing the thick, as‐grown, 3C–SiC layers deposited on top and results from, both, infrared and Raman spectroscopy collected on 35 mm diameter wafers will be presented. From DDX and low temperature photoluminescence measurements, we will show that a similar 3C–SiC quality can be achieved on, both, parts of the initially compressive and tensile re‐grown layers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)