Growth of cubic GaN on nano-patterned 3C
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R.M. Kemper; M. Weinl; C. Mietze; M. Häberlen; T. Schupp; E. Tschumak; J.K.N. Li
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Article
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2011
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Elsevier Science
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English
⚖ 669 KB
Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers. Nano-patterning of 3C-SiC/Si (0 0 1) is achieved by self-ordered colloidal masks for the fir