𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effects of carbonization and substrate temperature on the growth of 3C–SiC on Si(1 1 1) by SSMBE

✍ Scribed by Zhongliang Liu; Jinfeng Liu; Peng Ren; Yuyu Wu; Pengshou Xu


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
438 KB
Volume
254
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Growth of cubic GaN on nano-patterned 3C
✍ R.M. Kemper; M. Weinl; C. Mietze; M. Häberlen; T. Schupp; E. Tschumak; J.K.N. Li 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 669 KB

Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers. Nano-patterning of 3C-SiC/Si (0 0 1) is achieved by self-ordered colloidal masks for the fir