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Epitaxial growth of 3CSiC on Si(111) from hexamethyldisilane

✍ Scribed by C.H. Wu; C. Jacob; X.J. Ning; S. Nishino; P. Pirouz


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
935 KB
Volume
158
Category
Article
ISSN
0022-0248

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Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i