✦ LIBER ✦

RHEED studies of MnF2 epitaxial growth on Si(111) substrates

✍ Scribed by Yakovlev, N. L.; Banshchikov, A. G.; Moisseeva, M. M.; Sokolov, N. S.; Beeby, J. L.; Maksym, P. A.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 182 KB
Volume: 28
Category: Article
ISSN: 0142-2421
DOI: 10.1002/(sici)1096-9918(199908)28:1<264::aid-sia590>3.0.co;2-#

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✦ Synopsis

Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an interlayer spacing of 0.305 ± 0.005 nm, which is 3% less than for bulk CaF 2 . Thicker films have the tetragonal rutile structure, so the film surface is the (110) plane of MnF 2 with its [001] axis parallel to h110i directions of the substrate.

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