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The Growth of Transition Metals on H-Passivated Si(111) Substrates

✍ Scribed by J. O. Hauch; M. Fonine; U. May; R. Calarco; H. Kittur; J. M. Choi; U. Rüdiger; G. Güntherodt

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
444 KB
Volume
11
Category
Article
ISSN
1616-301X

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✍ Yakovlev, N. L.; Banshchikov, A. G.; Moisseeva, M. M.; Sokolov, N. S.; Beeby, J. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 182 KB 👁 1 views

Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i