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Ab initio study of epitaxial growth on stepped Si(100) surface

✍ Scribed by V. Milman

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
172 KB
Volume
61
Category
Article
ISSN
0020-7608

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✦ Synopsis

Diffusion of a Si adatom over the reconstructed Si 100 surface with a single-height step on it is studied using the pseudopotential total energy method. The S rebonded step is B shown to act as a good sink for adatoms descending onto the lower ledge. This is due to the presence of deep traps on the lower terrace and to the negative Ehrlich᎐Schwoebel Ž barrier the activation barrier for descent from the edge is 0.23 eV lower than for the . motion on a flat surface . The diffusion characteristics of the adatom on both terraces are virtually unaffected by the presence of the step. However, the dimer buckling sequence on a lower terrace is strongly dependent on the position of the adatom along the diffusion path.

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