Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A
โฆ LIBER โฆ
Ab initio Calculations of GaN Initial Growth Processes on GaAs(111)A and GaAs(111)B Surfaces
โ Scribed by Matsuo, Y. ;Kumagai, Y. ;Irisawa, T. ;Koukitu, A.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 97 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
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