Polarity Inversion during Halide VPE Growth of GaN on GaAs(111)B-As Surface at High Temperatures

✍ Scribed by Hasegawa, F. ;Namerikawa, M. ;Takahashi, O. ;Souda, R.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 104 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200111)188:1<443::aid-pssa443>3.0.co;2-p