Polarity Inversion by Supplying Group-III Source First in MOMBE of GaN/AlN or GaN on GaAs (111)B (As Surface)

V/III Ratio Dependence of Polarity of Ga

V/III Ratio Dependence of Polarity of GaN Grown on GaAs (111)A-Ga and (111)B-As Surfaces by MOMBE

✍ O. Takahashi; T. Nakayama; R. Souda; F. Hasegawa 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB 👁 1 views

In order to investigate the influence of the substrate polarity and growth conditions on the polarity, GaN was grown on GaAs (111)A-Ga and B-As surfaces with different V/III ratios by metalorganic molecular beam epitaxy (MOMBE). It was found that for GaN grown on GaAs (111)A-Ga surface polarity was