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V/III Ratio Dependence of Polarity of GaN Grown on GaAs (111)A-Ga and (111)B-As Surfaces by MOMBE

โœ Scribed by O. Takahashi; T. Nakayama; R. Souda; F. Hasegawa

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
103 KB
Volume
228
Category
Article
ISSN
0370-1972

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โœฆ Synopsis

In order to investigate the influence of the substrate polarity and growth conditions on the polarity, GaN was grown on GaAs (111)A-Ga and B-As surfaces with different V/III ratios by metalorganic molecular beam epitaxy (MOMBE). It was found that for GaN grown on GaAs (111)A-Ga surface polarity was dominant independent of the V/III ratio, but the polarity of GaN grown on GaAs (111)B depends on the V/III ratio; N polarity was dominant for high V/III ratios (N rich) and Ga polarity was dominant for low V/III ratios (Ga rich).

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Comparison of GaN Buffer Layers Grown on
Comparison of GaN Buffer Layers Grown on GaAs (111)A and (111)B Surfaces
โœ Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 104 KB ๐Ÿ‘ 1 views

Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A