Comparison of GaN Buffer Layers Grown on GaAs (111)A and (111)B Surfaces

✍ Scribed by Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 104 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200112)188:2<549::aid-pssa549>3.0.co;2-w

✦ Synopsis

Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A surface, the LT-GaN buffer layers showed smooth surface and covered the GaAs homogeneously. On GaAs (111)B surface, however, the LT-GaN buffer layers showed rough surface with some pits, and surface roughness increased with increasing thickness of the LT-GaN buffer layer. Due to the poor morphology of the LT-GaN buffer layers on GaAs (111)B, the GaAs was eroded during subsequent heating up to 1000 C in NH 3 ambient, whereas no deterioration was observed on GaAs (111)A surfaces covered with the LT-GaN buffer layers.