A Comparative Study of MOVPE Growth of InN on GaAs(111) Substrates Using a Nitrided or Grown GaN Buffer Layer

✍ Scribed by Yamamoto, A. ;Adachi, M. ;Arita, T. ;Sugiura, T. ;Hashimoto, A.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 143 KB
• Volume: 176
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199911)176:1<595::aid-pssa595>3.0.co;2-v