๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates

โœ Scribed by Suzuki, S. ;Nemoto, T. ;Kaifuchi, Y. ;Ishitani, Y. ;Yoshikawa, A.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
130 KB
Volume
192
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Comparison of GaN Buffer Layers Grown on
โœ Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 104 KB ๐Ÿ‘ 1 views

Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A

Influence of MBE Growth Temperature on t
โœ Georgakilas, A. ;Androulidaki, M. ;Tsagaraki, K. ;Amimer, K. ;Constantinidis, G. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 183 KB ๐Ÿ‘ 2 views

A. Georgakilas 1 ) (a, b), M. Androulidaki (a), K. Tsagaraki (a), K. Amimer (a), G. Constantinidis (a), N.T. Pelekanos (c), M. Calamiotou (d), Zs. Czigany (e), and B. Pecz (e)