Comparison of GaN Buffer Layers Grown on
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Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A.
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Article
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2001
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John Wiley and Sons
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English
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Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A