✦ LIBER ✦

Ab initio studies of Ge addimers on the Si(100) surface

✍ Scribed by Q.-M. Zhang; Huimin Cai; Zhenyu Zhang

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 222 KB
Volume: 80
Category: Article
ISSN: 0020-7608
DOI: 10.1002/1097-461x(2000)80:4/5<708::aid-qua20>3.0.co;2-2

No coin nor oath required. For personal study only.

✦ Synopsis

The atomic and electronic structures of Ge dimers adsorbed on top of a Si(100) flat surface has been investigated by first-principles molecular dynamics method. Four high-symmetry configurations have been considered and thoroughly relaxed. The most stable configuration for Ge dimers is found to be on the trough, in the middle of, and parallel to the substrate Si dimers. These results are consistent with recent experimental studies of the system using the scanning tunneling microscopy.

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