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Effect of Reduced Pressure on 3C-SiC Heteroepitaxial Growth on Si by CVD

✍ Scribed by Y. Ishida; T. Takahashi; H. Okumura; K. Arai; S. Yoshida

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Volume: 12
Category: Article
ISSN: 0948-1907
DOI: 10.1002/cvde.200506464

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