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Low temperature epitaxial growth of 3C-SiC on (111) silicon substrates

✍ Scribed by Hirabayashi, Yasuo; Kobayashi, Ken; Karasawa, Shiro

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
206 KB
Volume
99
Category
Article
ISSN
0022-0248

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Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i