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Growth mechanism of 3C-SiC layers at a low temperature region in low-pressure CVD

✍ Scribed by Y. Hattori; T. Suzuki; T. Murata; T. Yabumi; K. Yasuda; M. Saji

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 379 KB
Volume: 115
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(91)90812-j

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